mar. 2002 FL16KM-6A outline drawing dimensions in mm to-220fn mitsubishi nch power mosfet FL16KM-6A high-speed switching use application smps, inverter fluorescent light sets, etc. 300 30 16 48 16 35 C 55 ~ +150 C 55 ~ +150 2000 2.0 v gs = 0v v ds = 0v l = 200 h ac for 1minute, terminal to case typical value drain-source voltage gate-source voltage drain current drain current (pulsed) avalanche drain current (pulsed) maximum power dissipation channel temperature storage temperature isolation voltage weight v v a a a w c c v g v dss v gss i d i dm i da p d t ch t stg v iso symbol maximum ratings (tc = 25 c) parameter conditions ratings unit 10v drive v dss ............................................................................... 300v r ds (on) (max) .............................................................. 0.35 ? i d ......................................................................................... 16a ? ? ? ? gate ? drain ? source 15 0.3 14 0.5 10 0.3 2.8 0.2 3.2 0.2 1.1 0.2 1.1 0.2 0.75 0.15 2.54 0.25 2.54 0.25 2.6 0.2 4.5 0.2 0.75 0.15 3 0.3 3.6 0.3 6.5 0.3 ???
mar. 2002 mitsubishi nch power mosfet FL16KM-6A high-speed switching use performance curves v (br) dss v (br) gss i gss i dss v gs (th) r ds (on) v ds (on) ? y fs ? c iss c oss c rss t d (on) t r t d (off) t f v sd r th (ch-c) v v a ma v ? v s pf pf pf ns ns ns ns v c/w 300 30 2.0 3.0 0.29 2.32 10 950 175 20 15 30 150 60 1.5 10 1 4.0 0.35 2.80 2.0 3.57 electrical characteristics (tch = 25 c) drain-source breakdown voltage gate-source breakdown voltage gate-source leakage current drain-source leakage current gate-source threshold voltage drain-source on-state resistance drain-source on-state voltage forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time source-drain voltage thermal resistance symbol unit parameter test conditions limits min. typ. max. i d = 1ma, v gs = 0v i gs = 100 a, v ds = 0v v gs = 25v, v ds = 0v v ds = 300v, v gs = 0v i d = 1ma, v ds = 10v i d = 8a, v gs = 10v i d = 8a, v gs = 10v i d = 8a, v ds = 10v v ds = 25v, v gs = 0v, f = 1mhz v dd = 150v, i d = 8a, v gs = 10v, r gen = r gs = 50 ? i s = 8a, v gs = 0v channel to case 0 10 20 30 40 50 0 200 50 100 150 10 C 1 10 0 2 3 5 7 10 1 2 3 5 7 2 3 5 10 1 33 57 2 10 2 357 2 10 3 357 10 2 7 2 100s tw = 10s 1ms 10ms dc t c = 25 c single pulse 0 10 20 30 40 50 0 1020304050 v gs = 20v p d = 35w t c = 25 c pulse test 10v 5v 4v 6v 7v 0 4 8 12 16 20 0 4 8 121620 v gs = 20v t c = 25 c pulse test 10v 4v 5v 4.5v 5.5v 7v 6v power dissipation derating curve case temperature t c ( c) power dissipation p d (w) maximum safe operating area drain-source voltage v ds (v) drain current i d (a) output characteristics (typical) drain current i d (a) drain-source voltage v ds (v) output characteristics (typical) drain current i d (a) drain-source voltage v ds (v)
mar. 2002 mitsubishi nch power mosfet FL16KM-6A high-speed switching use 10 1 10 2 2 3 5 7 10 3 2 3 5 7 10 4 2 3 5 7 10 0 357 2 10 1 357 2 10 2 323 57 ciss coss crss t c h = 25 c f = 1mh z v gs = 0v 10 0 10 2 10 1 23457 23457 10 0 10 1 2 3 4 5 7 2 3 4 5 5 7 t c = 25 c 125 c 75 c v ds = 10v pulse test 0 8 16 24 32 40 0 4 8 12 16 20 t c = 25 c v ds = 50v pulse test 0 4 8 12 16 20 0 4 8 12 16 20 16a 8a i d = 30a t c = 25 c pulse test 0 0.1 0.2 0.3 0.4 0.5 10 C 1 2 10 0 357 2 10 1 357 2 10 2 357 t c = 25 c pulse test v gs = 10v 20v 10 0 10 2 10 1 23457 23457 10 1 2 3 10 2 2 3 3 4 5 7 5 7 4 t c h = 25 c v dd = 150v v gs = 10v r gen = r gs = 50 ? t d(off) t d(on) t f t r on-state voltage vs. gate-source voltage (typical) gate-source voltage v gs (v) drain-source on-state voltage v ds (on) (v) on-state resistance vs. drain current (typical) drain current i d (a) drain-source on-state resistance r ds (on) ( ? ) transfer characteristics (typical) gate-source voltage v gs (v) drain current i d (a) forward transfer admittance vs. drain current (typical) drain current i d (a) forward transfer admittance ? y fs ? (s) switching characteristics (typical) drain-source voltage v ds (v) capacitance vs. drain-source voltage (typical) drain current i d (a) capacitance ciss, coss, crss (pf) switching time (ns)
mar. 2002 mitsubishi nch power mosfet FL16KM-6A high-speed switching use 0.4 0.6 0.8 1.0 1.2 1.4 C 50 0 50 100 150 v gs = 0v i d = 1ma 0 1.0 2.0 3.0 4.0 5.0 C 50 0 50 100 150 v ds = 10v i d = 1ma 0 8 16 24 32 40 0 0.8 1.6 2.4 3.2 4.0 t c = 125 c 75 c 25 c v gs = 0v pulse test 10 C 1 10 0 2 3 5 7 10 1 2 3 5 7 C 50 0 50 100 150 v gs = 10v i d = 8a pulse test source-drain diode forward characteristics (typical) source-drain voltage v sd (v) source current i s (a) channel temperature tch ( c) drain-source on-state resistance r ds (on) (t c) threshold voltage vs. channel temperature (typical) gate-source threshold voltage v gs (th) (v) channel temperature tch ( c) breakdown voltage vs. channel temperature (typical) on-state resistance vs. channel temperature (typical) drain-source on-state resistance r ds (on) (25 c) channel temperature tch ( c) drain-source breakdown voltage v (br) dss (t c) drain-source breakdown voltage v (br) dss (25 c) transient thermal impedance characteristics pulse width t w (s) transient thermal impedance z th (ch C c) ( c/ w) 10 C 2 10 C 1 2 3 5 7 10 0 2 3 5 7 10 1 2 3 5 7 10 C 4 23 57 23 57 23 57 23 57 10 0 23 57 10 1 23 57 10 2 10 C 3 10 C 2 10 C 1 d = 1.0 0.5 0.2 0.1 0.05 0.02 0.01 single pulse p dm tw d = t tw t 0 4 8 12 16 20 0 1020304050 v ds = 50v 200v 100v t c h = 25 c i d = 16a gate-source voltage vs. gate charge (typical) gate charge q g (nc) gate-source voltage v gs (v)
|
